| 摘要 |
<P>PROBLEM TO BE SOLVED: To precisely and easily measure a retreat amount of a line end of a resist pattern, and to quantitatively determine a resist blur indicating the blurring of a resist based on a measured result therein. <P>SOLUTION: The resist is exposed/developed using an evaluation mask pattern arranged opposedly to a line and space pattern with pitches different each other, and the line end retreat amount of the pattern is found using an overlapping inspection device. The found line end retreat amount is compared with a characteristic function of the resist blur to find the resist blur. <P>COPYRIGHT: (C)2009,JPO&INPIT |
