| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor substrate for forming a single crystal semiconductor layer isolated from a single crystal semiconductor substrate on a support substrate such as a glass substrate and the like, and a method of regenerating the single crystal substrate formed after the semiconductor layer is isolated therefrom. SOLUTION: When the single crystal semiconductor layer is bonded to the support substrate such as a glass substrate and the like, a silicon oxide film is used for one or both of the support substrate and the single crystal semiconductor. This structure results in providing a SOI layer whose adhesion of the bonding portion is strong even if the heat resistant temperature of the glass substrate and the like is 700°C or lower. Additionally, the single crystal semiconductor substrate from which the single crystal semiconductor layer is isolated is reprocessed such that the single crystal semiconductor substrate is irradiated with laser light from the isolated surface side of the semiconductor layer to melt the surface of the single crystal substrate during the melting time per region of 0.5 microseconds to 1 millisecond. Then, the reprocessed single crystal semiconductor substrate is reused. COPYRIGHT: (C)2009,JPO&INPIT |
