| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a super junction region capable of preventing a breakdown voltage from decreasing owing to variation in impurity amount between a p type pillar regions and an n type pillar region. SOLUTION: A semiconductor device includes an n+ type semiconductor substrate 1 and a super junction region that has, on the top of the substrate 1, an n and p type pillar regions 2 and 3 provided alternately. The device also includes, in the top surface of the super junction region, a p type base region 4 and an n type source layer 5. The device also includes a gate electrode 7 via a gate-insulating film 6, a drain electrode 9 on the bottom of the substrate 1, and a source electrode 8 on the top of the substrate 1. In the top surface of the super junction region in the terminal region, a RESURF region 10 is formed. The resurf region 10 has a comb-like planar shape with repeatedly-formed teeth having tips facing the end portion of the terminal region, projections of the bomb-like planar shape being tapered toward tips. COPYRIGHT: (C)2009,JPO&INPIT |
