A transistor. The transistor including: a well region in a substrate; a gate dielectric layer on a top surface of the well region; a polysilicon gate electrode on a top surface of the gate dielectric layer; spacers formed on opposite sidewalls of the polysilicon gate electrode; source/drain regions formed on opposite sides of the polysilicon gate electrode in the well region; a first doped region in the polysilicon gate electrode, the first doped region extending into the polysilicon gate electrode from a top surface of the polysilicon gate electrode; and a buried second doped region in the polysilicon gate electrode.
申请公布号
US2009121298(A1)
申请公布日期
2009.05.14
申请号
US20090348404
申请日期
2009.01.05
申请人
FURUKAWA TOSHIHARU;HAKEY MARK C;HOLMES STEVEN J;HORAK DAVID V;KOBURGER III CHARLES W
发明人
FURUKAWA TOSHIHARU;HAKEY MARK C.;HOLMES STEVEN J.;HORAK DAVID V.;KOBURGER, III CHARLES W.