发明名称 CHEMICAL VAPOR DEPOSITION SYSTEM
摘要 <p><P>PROBLEM TO BE SOLVED: To solve the problem caused by the sagging of a high temperature medium 4 in a chemical vapor deposition system where a high temperature medium CVD process is performed, and to improve running cost and productivity. <P>SOLUTION: In a chemical vapor deposition system where a product produced when a raw material gas introduced from a gas introduction head 31 within a treatment chamber 1 in a decompression state comes into contact with the surface of the high temperature medium 4 whose temperature is held to the prescribed high one by an energy applying mechanism 5 or passes through the vicinity of the surface thereof reaches the surface of a substrate 9 held by a substrate holder 2, so as to form a thin film, the substrate holder 2 is composed of a first substrate holder and a second substrate holder vertically holding the substrate 9 respectively at the positions symmetrical with the high temperature medium 4 sandwiched, and the high temperature medium 4 is composed of a plurality of medium elements 41 installed within a vertical face at an angle close to a vertical state than 45 degrees obliquely within the vertical face. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009102736(A) 申请公布日期 2009.05.14
申请号 JP20080308930 申请日期 2008.12.03
申请人 CANON ANELVA CORP 发明人 IKEDA KEI
分类号 C23C16/44;H01L21/205;H01L31/04 主分类号 C23C16/44
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