发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a substrate processing apparatus for uniformly performing processing using a treatment liquid to the entire region of one surface and the other surface of a substrate by removing gas staying in the liquid-tight space of the treatment liquid. SOLUTION: While a wafer W is being held by a lower plate section 4, an opposing surface 9 under the substrate of the lower plate section 4 opposes the lower surface of the wafer. An upper plate 2 is arranged opposite to the wafer W. The treatment liquid is supplied to an upper treatment space 41 sandwiched between the upper surface of the wafer W and an opposing surface 19 above the substrate of the upper plate 2, thus making the upper treatment space 41 liquid-tight by the treatment liquid. The treatment liquid is supplied to a lower treatment space 42 sandwiched between the lower surface of the wafer W and the opposing surface 9 under the substrate of the lower plate section 4, thus making the lower treatment space 42 liquid-tight by the treatment liquid. The upper plate 2 and the lower plate section 4 are formed by hydrophilic quartz. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009105144(A) 申请公布日期 2009.05.14
申请号 JP20070274034 申请日期 2007.10.22
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 ANO SEIJI;UCHIDA HIROAKI;MAEKAWA NAOTADA
分类号 H01L21/304;G02F1/1333;G11B5/84;G11B7/26;G11B11/105 主分类号 H01L21/304
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