发明名称 |
SUBSTRATE PROCESSING APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing apparatus for uniformly performing processing using a treatment liquid to the entire region of one surface and the other surface of a substrate by removing gas staying in the liquid-tight space of the treatment liquid. SOLUTION: While a wafer W is being held by a lower plate section 4, an opposing surface 9 under the substrate of the lower plate section 4 opposes the lower surface of the wafer. An upper plate 2 is arranged opposite to the wafer W. The treatment liquid is supplied to an upper treatment space 41 sandwiched between the upper surface of the wafer W and an opposing surface 19 above the substrate of the upper plate 2, thus making the upper treatment space 41 liquid-tight by the treatment liquid. The treatment liquid is supplied to a lower treatment space 42 sandwiched between the lower surface of the wafer W and the opposing surface 9 under the substrate of the lower plate section 4, thus making the lower treatment space 42 liquid-tight by the treatment liquid. The upper plate 2 and the lower plate section 4 are formed by hydrophilic quartz. COPYRIGHT: (C)2009,JPO&INPIT
|
申请公布号 |
JP2009105144(A) |
申请公布日期 |
2009.05.14 |
申请号 |
JP20070274034 |
申请日期 |
2007.10.22 |
申请人 |
DAINIPPON SCREEN MFG CO LTD |
发明人 |
ANO SEIJI;UCHIDA HIROAKI;MAEKAWA NAOTADA |
分类号 |
H01L21/304;G02F1/1333;G11B5/84;G11B7/26;G11B11/105 |
主分类号 |
H01L21/304 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|