| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having high carrier mobility in a channel region. SOLUTION: The semiconductor device 1 is provided with a semiconductor substrate 2, a semiconductor layer 3 which is formed on the semiconductor substrate and is formed of first crystal whose inner carrier mobility is higher than a Si crystal, a gate insulting film 4 formed on the semiconductor layer, a gate electrode formed on the gate insulating film and source/drain regions which are formed by sandwiching the semiconductor layer, include second crystal giving distortion to the semiconductor layer in a direction where carrier mobility in the semiconductor layer rises and have source/drain extension regions being shallow regions which are brought into contact with the semiconductor layer. COPYRIGHT: (C)2009,JPO&INPIT
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