| 摘要 |
In a non-volatile semiconductor memory device including a source region separated from a drain region by a channel region and with an electrically floating gate electrode spaced from and overlying the channel region, a flexible member is spaced from the floating gate and capable of being flexed towards the floating gate for depositing or removing electrical charge on the floating gate in response to a voltage potential between the flexible member and the channel region. In one embodiment, the flexible member comprises a contact gate electrode. In another embodiment, only a single gate electrode is employed without a separate floating gate.
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