| 摘要 |
A semiconductor device includes a semiconductor layer with a first electrode formed by a sintered, conductive, porous granulate and formed in or on the semiconductor layer or in or on at least one insulating layer arranged on the semiconductor layer; furthermore dielectric material covering the surface of the sintered, conductive, porous granulate, and a second electrode at least partially covering the dielectric material, wherein the dielectric material electrically insulates the second electrode from the first electrode.
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