Defects e.g. crystal growth defect, detecting method for photo-lithography mask i.e. reticle, to produce microstructure e.g. integrated circuit, involves inspecting defect on set of images to evaluate presence of repeating defects in images

摘要

The method involves conducting a set of illumination processes with a photo-lithography mask (200) based on two illumination parameter adjustments, in order to produce a set of respective images of the optical lithography mask. The illumination parameter adjustments include different parameter values. Defects on the set of images are inspected, in order to evaluate the presence of repeating defects (207) in the images. One of the parameter values is an illumination dosage. The images are produced on an individual substrate (260). An independent claim is also included for a method for evaluating of illuminability of mask defects.