METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device for improving yield of the semiconductor device provided with a ferroelectric capacitor. SOLUTION: The method of manufacturing the semiconductor device includes: a step of forming a first interlayer dielectric 31 above a silicon substrate 20; a step of forming a capacitor Q formed by laminating a lower electrode 41a, a capacitor dielectric film 42a made of a ferroelectric material and an upper electrode 43a made of a conductive oxide on the first interlayer dielectric 31 in this order; a step of forming a second interlayer dielectric 54 coating the capacitor Q; a step of forming a hole 54a exposing the upper electrode 43a in the second interlayer dielectric 54 on the upper electrode 43a; a step of forming a single-layer glue film 58 made of a conductive nitride connected to the upper electrode 43a in the hole 54a by a sputtering method; a step of annealing the glue film 58; and a step of forming a conductive plug 59a on the glue film 58 in the hole 54a. COPYRIGHT: (C)2009,JPO&INPIT