发明名称 |
METHOD FOR MANUFACTURING OF THIN-FILM TRANSISTOR, THIN-FILM TRANSISTOR AND DISPLAY UNIT |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing of a high-performance thin-film transistor capable of being manufactured by a simple process and at a low cost, a thin-film transistor and a display unit. SOLUTION: This method for manufacturing of a thin-film transistor secures high performance by forming a source electrode and a drain electrode using a plating method so that the thin-film transistor can be manufactured by a simple process and at a low cost, and the source electrode, the drain electrode and an insulating part separating the source electrode and the drain electrode can be planarized. A thin-film transistor and a display unit can also be provided. COPYRIGHT: (C)2009,JPO&INPIT
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申请公布号 |
JP2009105258(A) |
申请公布日期 |
2009.05.14 |
申请号 |
JP20070276285 |
申请日期 |
2007.10.24 |
申请人 |
KONICA MINOLTA HOLDINGS INC |
发明人 |
MASAZUMI NAOKI;YAMADA JUN |
分类号 |
H01L21/336;G02F1/1368;H01L21/288;H01L29/417;H01L29/786;H01L51/05 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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