| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device having a ferroelectric capacitor covered with a dense protective film. SOLUTION: The manufacturing method of the semiconductor device includes the stages of: forming the ferroelectric capacitor Q comprising a lower electrode film 18, a ferroelectric film 19 and upper electrode films 20 to 22 on a semiconductor substrate 1, forming a first protective film 26 which has a thickness such that constituent elements in the ferroelectric film 19 are not perneated and water and oxygen are permeated by means of annealing under predetermined conditions, on a surface of the ferroeelctric capacitor Q, and annealing the first protective film 26 under the predetermined conditions in a first oxygen-containing atmosphere to form a second protective film 27 on the first protective film 26; and annealing the second protective film 27 in a second oxygen-containing atmosphere. COPYRIGHT: (C)2009,JPO&INPIT
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