| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To prevent mechanical damage or degradation of an electrode part or the like of a semiconductor element, caused by a stress by ultrasonic vibration in flip chip connection, in a bump structure of a semiconductor device. <P>SOLUTION: This bump structure includes: a first bump formed on an electrode pad of a semiconductor element, and having a stud shape; a second bump formed by being stacked thereon and having a stud shape; and an organic resin layer formed to cover a side peripheral surface of the first bump. The organic resin layer is formed to fill at least a part of a constricted part formed between an end part of the first bump, and a bottom surface of the second bump, and formed not to extend upward relative to the bottom surface of the second bump. This semiconductor device includes a semiconductor element having a bump structure, and a wiring board having electrode terminals, and an end part of the second bump is jointed to an electrode terminal of the wiring board, and connected thereto by flip-chip connection. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
