发明名称 PLASMA ETCHING CHAMBER
摘要 <p>Disclosed is a plasma etching chamber including a gas distribution plate guiding a reaction gas to the edge of the wafer; a plate disposed to be spaced apart from the gas distribution plate; and bumper portions protruding on at least one of opposite surfaces of the gas distribution plate and the plate to allow the pressure of the reaction gas moving to the edge of the wafer to be uniform.</p>
申请公布号 WO2009061104(A1) 申请公布日期 2009.05.14
申请号 WO2008KR06442 申请日期 2008.10.31
申请人 SOSUL CO., LTD.;LEE, HEE-SE;CHUNG, SEONG-HYUN;PARK, SE MUN 发明人 LEE, HEE-SE;CHUNG, SEONG-HYUN;PARK, SE MUN
分类号 H01L21/3065 主分类号 H01L21/3065
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