<p>Disclosed is a plasma etching chamber including a gas distribution plate guiding a reaction gas to the edge of the wafer; a plate disposed to be spaced apart from the gas distribution plate; and bumper portions protruding on at least one of opposite surfaces of the gas distribution plate and the plate to allow the pressure of the reaction gas moving to the edge of the wafer to be uniform.</p>
申请公布号
WO2009061104(A1)
申请公布日期
2009.05.14
申请号
WO2008KR06442
申请日期
2008.10.31
申请人
SOSUL CO., LTD.;LEE, HEE-SE;CHUNG, SEONG-HYUN;PARK, SE MUN