| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of processing a high dielectric material wherein selectivity to a resist is increased, etching whose depth is at least 1.0μm is ensured, and an etching rate is increased and a machining time can be shortened. SOLUTION: Ridge working whose width is 3μm and height is 1.5μm is achieved by using gas whose ratio of carbon to fluorine is large, and increasing the selectivity to the resist by using high density plasma, a large flow rate, high vacuum process. Further, crystal recovery by oxygen electrical discharge and crystal defect removal are executed so that light scattering can be restrained, and optical confinement is realized. COPYRIGHT: (C)2009,JPO&INPIT |
