| 摘要 |
PROBLEM TO BE SOLVED: To provide a dividing method for a wafer with which a semiconductor substrate of a device having a metal layer bonded to an electrode frame can be prevented from cracking even when the metal layer to be stacked on the back surface of the semiconductor substrate is made thin. SOLUTION: Disclosed is the method for dividing the semiconductor wafer along streats, which wafer has devices sectioned and formed in a lattice shape by the streets on a substrate front surface and has the metal layer on the back surface, the dividing method for the semiconductor wafer including a step of holding the back surface side of the wafer 2 on a chuck table 41 and cutting the wafer along outermost-side streets to form a reference line, a step of cutting the wafer from the back surface side along the streets with a cutting blade 422 having a cutting blade in a V shape based upon the reference line to cut the metal layer and also forming a V-shaped cut groove 25, a step of removing processing strain remaining on the surface of the V-shaped cut groove, and a cutting step of cutting the part between the bottom portion of the V-shaped cut groove and the front surface of the semiconductor substrate along the streets. COPYRIGHT: (C)2009,JPO&INPIT
|
