METHOD OF FORMING IRON SILICIDE

摘要

PROBLEM TO BE SOLVED: To form single-phase iron silicide by a simple method. SOLUTION: A silicon oxide layer 102 is formed on a silicon substrate (silicon layer) 101 to a thickness of, for example, 1.8 nm. Then an iron layer 103 having a predetermined film thickness is formed on the silicon oxide layer 102. Thus the iron layer 103 is formed on the silicon substrate 101 with the silicon oxide layer 102 interposed therebetween, and then they are heated under predetermined temperature conditions to form silicide by subjecting iron of the iron layer 103 and silicon of the silicon substrate 101 to reaction through the silicon oxide layer 102, thereby forming an iron silicide layer 104 composed of single-phase (αphase) FeSi2(α-FeSi2) on the silicon substrate 101. COPYRIGHT: (C)2009,JPO&INPIT