发明名称 |
SILICON SINGLE CRYSTAL MANUFACTURING METHOD, APPARATUS FOR CONTROLLING MANUFACTURE OF SILICON SINGLE CRYSTAL, AND PROGRAM |
摘要 |
<p>According to a method of manufacturing a silicon monocrystal by FZ method, a P-type or N-type silicon crystal having been pulled up by CZ method is used as a raw material (6). While impurities whose conductivity type is the same as that of the raw material (6) are supplied by a gas doping method, the raw material (6) is recrystallized by an induction-heating coil (3) for obtaining a product-monocrystal (8).</p> |
申请公布号 |
EP2058420(A1) |
申请公布日期 |
2009.05.13 |
申请号 |
EP20070828489 |
申请日期 |
2007.09.27 |
申请人 |
SUMCO TECHXIV CORPORATION |
发明人 |
TOGAWA, SHINJI;SATO, TOSHIYUKI |
分类号 |
C30B29/06;C30B13/12 |
主分类号 |
C30B29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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