发明名称 SILICON SINGLE CRYSTAL MANUFACTURING METHOD, APPARATUS FOR CONTROLLING MANUFACTURE OF SILICON SINGLE CRYSTAL, AND PROGRAM
摘要 <p>According to a method of manufacturing a silicon monocrystal by FZ method, a P-type or N-type silicon crystal having been pulled up by CZ method is used as a raw material (6). While impurities whose conductivity type is the same as that of the raw material (6) are supplied by a gas doping method, the raw material (6) is recrystallized by an induction-heating coil (3) for obtaining a product-monocrystal (8).</p>
申请公布号 EP2058420(A1) 申请公布日期 2009.05.13
申请号 EP20070828489 申请日期 2007.09.27
申请人 SUMCO TECHXIV CORPORATION 发明人 TOGAWA, SHINJI;SATO, TOSHIYUKI
分类号 C30B29/06;C30B13/12 主分类号 C30B29/06
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