| 摘要 |
<p>A transistor of a semiconductor device includes a substrate, a gate over the substrate, a source/drain region formed in the substrate to have a channel region therebetween, and an epitaxial layer formed below the channel region to have a different lattice constant from the substrate. The epitaxial layer having a different lattice constant with a substrate material is formed below the channel region to apply a stress to the channel region. Thus, the mobility of carriers of the transistor increases.</p> |
