发明名称 |
Method of forming a semiconductor device |
摘要 |
The present invention is related to a method for forming a high-k gate dielectric, comprising the steps of:
- providing a semiconductor substrate,
- cleaning the substrate,
- performing a thermal treatment ,
- performing a high-k dielectric material deposition,
characterised in that said thermal treatment step is performed in a non-oxidizing ambient, leading to the formation of a thin interfacial layer. |
申请公布号 |
EP2058844(A1) |
申请公布日期 |
2009.05.13 |
申请号 |
EP20070119632 |
申请日期 |
2007.10.30 |
申请人 |
IMEC;TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.;KATHOLIEKE UNIVERSITEIT LEUVEN, K.U. LEUVEN R&D |
发明人 |
QUYANG, HUI;EVERAERT, JEAN-LUC;NYNS, LAURA;VOS, RITA |
分类号 |
H01L21/02;H01L21/3105;H01L21/314;H01L21/316 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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