Method for producing a n-metered zone in a semiconductor wafer and semiconductor component

摘要

The method involves opposing a side (101) by another side (102), adjoining the former side by a semiconductor region (103') and later side by another semiconductor region (104'). The later side of the wafer is irradiated with high-energy particles, thus producing crystal defects in the later semiconductor region. A thermal process is carried out, where the wafer is heated to temperatures of between seven hundred degree celcius and eleven hundred degree celcius. Independent claims are also included for the following: (1) a method for producing of a silicon on insulator substrate, which involves making two semiconductor wafers (2) a method for producing a n-endowed zone in a semiconductor wafer, which involves illuminating the wafer over one of the sides with protons (3) a vertical power semiconductor device, which has a semiconductor body and a semiconductor substrate.