发明名称 |
Semiconductor memory device |
摘要 |
A semiconductor memory device can reduce a data writing time. The semiconductor memory device includes a bit line sense amplifier connected to a pair of bit lines. A pair of first local lines id connected to the pair of bit lines by a first switching unit. A pair of second local lines is connected to the pair of first local lines by a second switching unit. A writing driver drives the second local lines using a normal-driving voltage in response to a data signal through a global line. The writing driver drives the second local lines using an over-driving voltage having a higher level than that of the normal-driving voltage during a predetermined period.
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申请公布号 |
US7532530(B2) |
申请公布日期 |
2009.05.12 |
申请号 |
US20060528521 |
申请日期 |
2006.09.28 |
申请人 |
HYNIX SEMICONDUCTOR, INC. |
发明人 |
KIM DONG-KEUN |
分类号 |
G11C7/02 |
主分类号 |
G11C7/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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