Semiconductor memory device

摘要

A semiconductor memory device includes a bank including a plurality of cell blocks; a first group of local input/output lines to transfer data stored on a first group of the cell blocks; a second group of local input/output lines to transfer data stored on a second group of the cell blocks; a first precharge unit precharging the first group of the local input/output lines; a second precharge unit precharging the second group of the local input/output lines; a precharge signal generator to precharge the first and second groups of the cell blocks and the second group of the cell blocks.