发明名称 |
Apparatus and method for a non-volatile memory structure comprising a multi-layer silicon-rich, silicon nitride trapping layer |
摘要 |
A non-volatile memory structure comprises a trapping layer that includes a plurality of silicon-rich, silicon nitride layers. Each of the plurality of silicon-rich, silicon nitride layers can trap charge and thereby increase the density of memory structures formed using the methods described herein. In one aspect, the plurality of silicon-rich, silicon nitride layers are fabricated by converting an amorphous silicon layer by remote plasma nitrogen (RPN).
|
申请公布号 |
US7531411(B2) |
申请公布日期 |
2009.05.12 |
申请号 |
US20050248507 |
申请日期 |
2005.10.12 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LU CHI-PIN;YANG LING-WUU;CHEN KUANG-CHAO |
分类号 |
H01L21/336;H01L29/788 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|