发明名称 |
Semiconductor flash memory device and method of fabricating the same |
摘要 |
A semiconductor flash memory device. The flash memory device includes a floating gate electrode disposed in a recess having slanted sides in a semiconductor substrate. A gate insulation film is interposed between the floating gate electrode and the semiconductor substrate. A control gate electrode is disposed over the floating gate electrode. The floating gate electrode includes projections adjacent to the slanted sides of the recess.
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申请公布号 |
US7531410(B2) |
申请公布日期 |
2009.05.12 |
申请号 |
US20060648057 |
申请日期 |
2006.12.29 |
申请人 |
SAMSUNG ELECTRONIC CO., LTD. |
发明人 |
CHOI YONG-SUK;HAN JEONG-UK;JEON HEE-SEOG;YANG SEUNG-JIN;KWON HYOK-KI |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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