发明名称 Method of fabricating semiconductor devices
摘要 A method for increasing the removal rate of a photoresist layer used as an ion implant mask. The method includes performing a pre-treatment of a substrate, such as a plasma process, before forming the photoresist layer. The method can be applied to the fabrication of semiconductor devices for increasing the removal rate of the photoresist layer.
申请公布号 US7531434(B2) 申请公布日期 2009.05.12
申请号 US20050163469 申请日期 2005.10.20
申请人 UNITED MICROELECTRONICS CORP. 发明人 HUANG WEN-HSIEN;YANG MIN-CHIEH;LIAO JIUNN-HSING
分类号 H01L21/26 主分类号 H01L21/26
代理机构 代理人
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