发明名称 |
Method of fabricating semiconductor devices |
摘要 |
A method for increasing the removal rate of a photoresist layer used as an ion implant mask. The method includes performing a pre-treatment of a substrate, such as a plasma process, before forming the photoresist layer. The method can be applied to the fabrication of semiconductor devices for increasing the removal rate of the photoresist layer.
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申请公布号 |
US7531434(B2) |
申请公布日期 |
2009.05.12 |
申请号 |
US20050163469 |
申请日期 |
2005.10.20 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
HUANG WEN-HSIEN;YANG MIN-CHIEH;LIAO JIUNN-HSING |
分类号 |
H01L21/26 |
主分类号 |
H01L21/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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