发明名称 |
Reduced-resistance finFETs by sidewall silicidation and methods of manufacturing the same |
摘要 |
In a first aspect, a first method of manufacturing a finFET is provided. The first method includes the steps of (1) providing a substrate; and (2) forming at least one source/drain diffusion region of the finFET on the substrate. Each source/drain diffusion region includes (a) an interior region of unsilicided silicon; and (b) silicide formed on a top surface and sidewalls of the region of unsilicided silicon. Numerous other aspects are provided.
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申请公布号 |
US7531423(B2) |
申请公布日期 |
2009.05.12 |
申请号 |
US20050316244 |
申请日期 |
2005.12.22 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGUO;HSU LOUIS LU-CHEN;MANDELMAN JACK ALLAN;YANG HAINING |
分类号 |
H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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