发明名称 Method of manufacturing capacitor device
摘要 In a capacitor device of the present invention includes a substrate, a plurality of lower electrodes formed on the substrate, a plurality of dielectric films formed on a plurality of lower electrodes respectively in a state that the dielectric films are separated mutually, and upper electrodes formed on a plurality of dielectric films respectively, a plurality of capacitors each composed of the lower electrode, the dielectric film, and the upper electrode are arranged on the substrate respectively, and each of the dielectric films in a plurality of capacitors has a different film thickness.
申请公布号 US7531011(B2) 申请公布日期 2009.05.12
申请号 US20050272688 申请日期 2005.11.15
申请人 SHINKO ELECTRIC INDUSTRIES CO., LTD. 发明人 YAMASAKI TOMOO
分类号 H01G9/00;H01G13/00;H01G4/008;H01G4/10;H01G4/228;H01G4/33;H01G4/38;H01G13/06;H01L21/822;H01L23/498;H01L23/50;H01L27/04;H05K1/16;H05K1/18 主分类号 H01G9/00
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