发明名称 |
Semiconductor device and method of fabricating the same |
摘要 |
A protective insulating film is deposited over first and second field-effect transistors formed on a semiconductor substrate. A capacitor composed of a capacitor lower electrode, a capacitor insulating film composed of an insulating metal oxide film, and a capacitor upper electrode is formed on the protective insulating film. A first contact plug formed in the protective insulating film provides a direct connection between the capacitor lower electrode and an impurity diffusion layer of the first field-effect transistor. A second contact plug formed in the protective insulating film provides a direct connection between the capacitor upper electrode and an impurity diffusion layer of the second field-effect transistor.
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申请公布号 |
US7531863(B2) |
申请公布日期 |
2009.05.12 |
申请号 |
US20050270615 |
申请日期 |
2005.11.10 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NAGANO YOSHIHISA;UEMOTO YASUHIRO |
分类号 |
H01L21/768;H01L27/108;H01L21/8242;H01L21/8246;H01L23/522;H01L27/02;H01L27/10;H01L27/105 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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