发明名称 Semiconductor device and a method of manufacturing the same
摘要 A capacitor has an MIM (Metal Insulator Metal) structure comprising a lower electrode formed in the interior of an electrode trench which is formed in an interlayer insulating film, a dielectric film formed over the lower electrode, and an upper electrode formed over the dielectric film. The upper electrode and the dielectric film are each formed with an area larger than the area of the lower electrode so that the whole of the lower electrode is positioned inside the upper electrode and the dielectric film. The reliability and production yield of the capacitor are improved.
申请公布号 US7531419(B2) 申请公布日期 2009.05.12
申请号 US20060432516 申请日期 2006.05.12
申请人 RENESAS TECHNOLOGY CORP. 发明人 TORII KATSUHIRO
分类号 H01L21/20 主分类号 H01L21/20
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