| 摘要 |
A CMOS image sensor (CIS) process is described. A semiconductor substrate is provided, and then a gate dielectric layer, a gate material layer and a thickening layer are sequentially formed on the substrate, wherein the thickening layer includes at least a hard mask layer. The thickening layer is defined to form a transfer-gate pattern, and then the transfer-gate pattern is used as an etching mask to pattern the gate material layer and form a transfer gate. Ion implantation is then conducted to form a PN diode in the substrate with the transfer-gate pattern and the transfer gate as a mask.
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