| 摘要 |
The solid-state imaging device in the present invention is a solid-state imaging device that includes plural pixel cells arranged on a semi-conductor substrate, and a driving unit installed on the semi-conductor substrate in order to drive each pixel cell, wherein each pixel cell includes: a photodiode which converts incident light into a signal charge; a transfer transistor which transfers the signal charge of the photodiode to a floating diffusion unit; the floating diffusion unit accumulates the transferred signal charge; and a control implantation layer which is positioned under a gate of the transfer transistor, and becomes a charge transfer path when the charge is transferred from the photodiode to the floating diffusion unit, wherein an impurity concentration of the control implantation layer is denser toward the bottom of the substrate than toward the surface of the semi-conductor substrate.
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