| 摘要 |
A semiconductor device includes main power supply wirings VDD and VSS, an pseudo power supply wiring VDT, inverters connected between the pseudo power supply wiring VDT and the main power supply wiring VSS, and inverters connected between the main power supply wiring VDD and the main power supply wiring VSS. Between the main power supply wiring VDD and the pseudo power supply wiring VDT, an N-channel MOS transistor and a P-channel MOS transistor that are rendered a conductive state at the time of active are connected in parallel. According to the present invention, the transistors different in conductivity type are used in parallel, and thus, it becomes possible to reduce power consumption at the time of standby while suppressing a decrease in switching speed from a standby state to an active state.
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