发明名称 |
Method of removing residue from a substrate after a DRIE process |
摘要 |
The present disclosure provides a method of cleaning a semiconductor substrate after a DRIE etch process, wherein residue from the DRIE process is removed without damaging the substrate. The process may include contacting the micro-fluid ejection head with an aqueous solution of TMAH, stripping a photoresist etch mask from the micro-fluid ejection head, and dissolving a passivating coating from the substrate. Then the substrate may be contacted with an acidic solution. The method may further include rinsing and drying the substrate.
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申请公布号 |
US7531047(B1) |
申请公布日期 |
2009.05.12 |
申请号 |
US20070954929 |
申请日期 |
2007.12.12 |
申请人 |
LEXMARK INTERNATIONAL, INC. |
发明人 |
DRYER PAUL WILLIAM;MRVOS JAMES MICHAEL;RHINE DAVID BRUCE |
分类号 |
B08B3/04 |
主分类号 |
B08B3/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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