发明名称 |
Semiconductor integrated circuit devices having high-Q wafer backside inductors and methods of fabricating same |
摘要 |
Methods are provided for fabricating semiconductor IC (integrated circuit) chips having high-Q on-chip inductors formed on the chip backside and connected to integrated circuits on the chip frontside using through-wafer interconnects. For example, a semiconductor device with a backside integrated inductor includes a semiconductor substrate having a frontside, a backside and a buried insulating layer interposed between the front and backsides of the substrate. An integrated circuit is formed on the frontside of the semiconductor substrate and an integrated inductor is formed on the backside of the semiconductor substrate. An interconnection structure is formed through the buried insulating layer to connect the integrated inductor to the integrated circuit. The semiconductor substrate may be an SOI (silicon on insulator) structure.
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申请公布号 |
US7531407(B2) |
申请公布日期 |
2009.05.12 |
申请号 |
US20060488242 |
申请日期 |
2006.07.18 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CLEVENGER LAWRENCE;DALTON TIMOTHY JOSEPH;HSU LOUIS;RADENS CARL;RAMACHANDRAN VIDHYA;WONG KEITH KWONG HON;YANG CHIH-CHAO |
分类号 |
H01L21/8234 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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地址 |
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