Semiconductor laser device, semiconductor laser system, optical pickup module and manufacturing for semiconductor laser system

摘要

A semiconductor laser device includes an n-type cladding layer 103 made of n-type (Al0.3Ga0.7)0.5In0.5P, an undoped active layer 104 and a first p-type cladding layer 105 made of p-type (Al0.3Ga0.7)0.5In0.5P. These layers are successively stacked in bottom-to-top order. The active layer 104 has a multi-quantum well structure composed of a first optical guide layer of undoped Al0.4Ga0.6As, a layered structure in which well layers of undoped GaAs and barrier layers of undoped Al0.4Ga0.6As are alternately formed, and a second optical guide layer of undoped Al0.4Ga0.6As. The first optical guide layer, the layered structure and the second optical guide layer are successively stacked in bottom-to-top order.