发明名称 |
Apparatus and method for detecting word line leakage in memory devices |
摘要 |
A method for detecting word line leakage in a memory device includes coupling a first plurality of word lines in the memory device to a voltage source while grounding a second plurality of word lines. Each of the second plurality of word lines is adjacent to a corresponding one of the first plurality of word lines. The method includes waiting for a period of time to allow the word lines to reach a predetermined read voltage level. The method also includes decoupling the first plurality of word lines from the voltage source and waiting for a second predetermined period of time to allow the first plurality of word lines to discharge. The method further includes sensing a current associated with the word lines, and comparing the current with a predetermined reference current which is selected for identifying a word line leakage condition associated with the first plurality of word lines.
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申请公布号 |
US7532513(B2) |
申请公布日期 |
2009.05.12 |
申请号 |
US20070845690 |
申请日期 |
2007.08.27 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHEN HAN-SUNG;LO SU-CHUEH;HUNG CHUN-HSIUNG;KUO NAI-PING;HSIEH MING-CHIH;TSAI WEN-PIN |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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