发明名称 |
Method of fabricating semiconductor device having contact hole with high aspect-ratio |
摘要 |
Provided is a method of fabricating a semiconductor device having a contact hole with a high aspect-ratio. The method includes: sequentially forming a lower pattern and an upper layer on a semiconductor substrate; sequentially forming a lower mask layer and an upper mask layer on the upper layer; sequentially patterning the lower and upper mask layers to form a hole exposing a top surface of the upper layer on the lower pattern; using the upper mask layer as an etching mask to anisotropically etch the exposed top surface to form an upper contact hole exposing a top surface of the lower pattern; and using the lower mask layer as an etching mask to anisotropically etch the exposed lower pattern to form a lower contact hole in the lower pattern, the lower contact hole extending from the upper contact hole.
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申请公布号 |
US7531450(B2) |
申请公布日期 |
2009.05.12 |
申请号 |
US20070759788 |
申请日期 |
2007.06.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG YUN-SEUNG;SEO JUN;CHAE MIN-CHUL;HWANG JAE-SEUNG;KWON SUNG-UN;CHO WOO-JIN |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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