发明名称 |
Method for fabricating capacitor in semiconductor device using hafnium terbium oxide dielectric layer |
摘要 |
The present invention relates to a method for fabricating a capacitor in a semiconductor device through the use of hafnium-terbium oxide (Hf1-xTbxO) as a dielectric layer. The method includes the steps of: forming a lower electrode on a substrate; forming an amorphous hafnium-terbium oxide (Hf1-xTbxO) dielectric layer on the lower electrode; crystallizing the Hf1-xTbxO dielectric layer by performing a thermal process; and forming an upper electrode on the Hf1-xTbxO dielectric layer.
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申请公布号 |
US7531422(B2) |
申请公布日期 |
2009.05.12 |
申请号 |
US20070652119 |
申请日期 |
2007.01.11 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
LEE KEE-JEUNG;ROH JAE-SUNG |
分类号 |
H01L21/473;H01L27/108;C23C16/40;C23C16/455;C23C16/56;H01L21/02;H01L21/314;H01L21/316;H01L21/8242 |
主分类号 |
H01L21/473 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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