发明名称 |
Focused ion beam apparatus and sample section forming and thin-piece sample preparing methods |
摘要 |
Detected is a secondary electron generated by irradiating a focused ion beam while performing etching a sample section and the around through scan-irradiating the focused ion beam. From a changing amount of the detected secondary electron signal an end-point detecting mechanism detects an end point to thereby terminate the etching, so that a center position of a defect or a contact hole is effectively detected even with an FIB apparatus not having a SEM observation function.
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申请公布号 |
US7531796(B2) |
申请公布日期 |
2009.05.12 |
申请号 |
US20070840575 |
申请日期 |
2007.08.17 |
申请人 |
SII NANOTECHNOLOGY INC. |
发明人 |
TASHIRO JUNICHI;IKKU YUTAKA;FUJII TOSHIAKI |
分类号 |
H01J37/305;G01N23/22;H01J37/30 |
主分类号 |
H01J37/305 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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