Semiconductor device having ferroelectric substance capacitor

摘要

The invention provides a semiconductor device having a ferroelectric substance capacitor small in the occupying area and large in capacitance and a semiconductor device having a ferroelectric substance capacitor reducing influence of noise and being few in malfunctions. The semiconductor device includes a first capacitor formed on a surface of a semiconductor substrate and a second capacitor of a ferroelectric substance capacitance laminated on the first capacitor so as to connect in series.