发明名称 Method for Fine Processing of Substrate, Method for Fabrication of Substrate, and Light Emitting Device
摘要 The present invention provides a method for fine processing of a substrate, a method for fabrication of a substrate, and a light emitting device. In the method for fine processing of a substrate, after removing a single particle layer from the substrate having the single particle layer, a hole having an inner diameter smaller than a diameter of a particle and centering on a position on the substrate where each particle constructing the single particle layer has been placed is formed by etching. The method for fabrication of a substrateincludesthefollowingsteps (I) to (V) inthisorder: (I) forming the single particle layer by arranging the particles on the substrate; (II) reducing the diameter of each of the particles by etching the obtained substrate; (III) forming a thin film composed of a mask material on the obtained substrate; (IV) removing the particle from the substrate and forming a mask having a hole with an inner diameter equivalent to the diameter of the particle at the position where the individual particle has existed; and (V) forming a hole with a diameter equivalent to the inner diameter of the hole of the mask on the substrate below the hole of the mask by etching the substrate using the mask. The light emitting device is made of a nitride semiconductor and is formed with a fine hole on an entire surface or a partial region of a light extraction surface and/or an opposing surface.
申请公布号 US2009114944(A1) 申请公布日期 2009.05.07
申请号 US20070294963 申请日期 2007.03.30
申请人 SUMITOMO CHEMICAL COMPANY , LIMITED 发明人 ONO YOSHINOBU;KASAHARA KENJI;UEDA KAZUMASA
分类号 B44C1/22;H01L21/306;H01L33/22 主分类号 B44C1/22
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