| 摘要 |
<p>A method for manufacturing a semiconductor device has a step for forming a first conductive film (28a), a first memory layer (36), and a second conductive film (38), a step for forming a first mask having a linear pattern extended in a first direction, a step for etching the second conductive film, the first memory layer and the first conductive film by using the first mask, a step for forming a first insulation layer (42) in such a manner as to embed the first conductive film, the first memory layer and the second conductive film, a step for forming a third conductive film (32), a second memory layer (48), and a fourth conductive film (56),a step for forming a second mask having the linear pattern extended in a second direction crossing the first direction, and a step for etching the fourth conductive film, the second memory layer, the third conductive film, the second conductive film, and the first memory layer by using the second mask. At a place where the first conductive film and the third conductive film cross each other, a first storage element (30) having a first lower electrode that is a part of the first conductive film, the first memory layer, a first upper electrode comprising the second conductive film is formed.</p> |
