| 摘要 |
PROBLEM TO BE SOLVED: To provide an electro-optic device having a layered structure comprising scanning lines, data lines, switching elements and interlayer films in which a higher transmittance for light in the layered structure is achieved. SOLUTION: The electro-optic device has a layered structure comprising scanning lines 3, data lines 6, TFTs 30 and pixel electrodes 9 and various kinds of interlayer insulating films (51, 52, 53, 61, 62, 80) appropriately arranged among these elements. In the layered structure, the film thickness db1 of each of the interlayer insulating films 61, 62 is defined by db1=(λ1/(2×n1))×(integer), whereinλ1 represents the wavelength of green light and n1 represents the refractive index of the films; and the film thickness db2 of each of insulating films 51 to 53 as integrated and of the film 80 is defined by db2=(λ2/(2×n2))×(integer), whereinλ2 is the wavelength of red light and n2 is the refractive index of the films, which may be n2≠n1 or n2=n1. COPYRIGHT: (C)2009,JPO&INPIT
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