| 摘要 |
PROBLEM TO BE SOLVED: To surely satisfy both of improving optical transmittance of a transmission region and making low capacity of a wiring cross region. SOLUTION: A TFT substrate 30 comprises: a plurality of first wirings that extend in parallel to each other; a plurality of second wirings 19a that extend in parallel to each other, intersecting with each of the first wirings; a first interlayer insulation film 18 containing a silicon nitride film 16 disposed between each of the first wirings and each of the second wirings 19a; a second interlayer insulation film 19 disposed on the second wirings 19a at the side opposite to the first interlayer insulation film 18; and a plurality of pixel electrodes 21 disposed in a matrix formation on the second interlayer insulation film 19 at the side opposite to the second wirings 19a. Definition is given to the transmission region T surrounded by each of the adjoining first wirings and each of the adjoining second wirings 19a, and the wiring cross region Y where each of the first wirings intersects with each of the second wirings 19a. The film thickness of the silicon nitride film 16 in the transmission region T is smaller than that of the silicon nitride film 16 in the wiring cross region Y, at a thickness of 130-160 nm. COPYRIGHT: (C)2009,JPO&INPIT
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