THIN-FILM PHOTOELECTRIC CONVERSION DEVICE

摘要

Intended is to provide a photoelectric conversion device, which is given a high conversion efficiency by developing a technique for forming an intermediate layer exhibiting excellent optical characteristics. Provided is a thin-film photoelectric conversion device having a series connection through an intermediate layer.The intermediate layer begins from a transparent oxide layer, and the subsequent layers are formed by laminating a carbon layer and a transparent oxide layer sequentially to n-layers (n = 1 or larger integers) so that the individual film thicknesses are optimized to improve wavelength selectivity and stress resistance while keeping the series resistance. The photoelectric conversion device is characterized in that a transparent conductive film on the side opposite to the light incidence side, at least one photoelectric conversion unit, a transparent electrode layer having conductivity represented by zinc oxide, a hard carbon layer having a conductivity and represented by diamond-like carbon, and a highly reflective electrode layer are laminated sequentially in the recited order over a translucent insulating substrate positioned on the optically incident side.