METHODS TO SHAPE THE ELECTRIC FIELD IN ELECTRON DEVICES, PASSIVATE DISLOCATIONS AND POINT DEFECTS, AND ENHANCE THE LUMINESCENCE EFFICIENCY OF OPTICAL DEVICES

摘要

A fluorine treatment to shape the electric field profile in electronic devices in 1,2, or 3 dimensions and a method to increase the breakdown voltage of AIGaN/GaN high electron mobility transistors, by the introduction of a controlled amount of dispersion into the device, are disclosed. The dispersion range is chosen to reduce the peak electric field in the channel without causing a significant decrease in the output power of the device. The whole transistor is passivated against dispersion with the exception of a small region 50 to 100 nm wide adjacent to the drain side of the gate. Three different methods to introduce dispersion in the 50 nm closest to the gate are described: introduction of a small gap between the passivation and the gate metal; gradually reducing the thickness of the passivation; and gradually reducing the thickness of the AIGaN cap layer in the region close the gate.