COPPER ANODE OR PHOSPHORUS-CONTAINING COPPER ANODE, METHOD FOR ELECTROPLATING COPPER ON SEMICONDUCTOR WAFER, AND SEMICONDUCTOR WAFER WITH PARTICLE NOT SIGNIFICANTLY DEPOSITED THEREON

摘要

This invention provides a copper anode or a phosphorus-containing copper anode for use in electrolytic copper plating on a semiconductor wafer, characterized in that the purity of the copper anode or the phosphorus-containing copper anode excluding phosphorus is not less than 99.99% by weight, and the content of silicon as an impurity is not more than 10 ppm by weight. There are also provided a method for electroplating copper which, in electrolytic copper plating, can efficiently prevent the deposition of particles onto an object to be plated, particularly onto a semiconductor wafer, a phosphorus-containing copper anode for electrolytic copper plating, and a semiconductor wafer comprising a copper layer, with particles not significantly deposited thereon, formed by electrolytic copper plating using them.