发明名称 |
HIGH SPEED LOW POWER MAGNETIC DEVICES BASED ON CURRENT INDUCED SPIN-MOMENTUM TRANSFER |
摘要 |
A high speed and low power method to control and switch the magnetization direction and/or helicity of a magnetic region in a magnetic device for memory cells using spin polarized electrical current. The magnetic device comprises a reference magnetic layer with a fixed magnetic helicity and/or magnetization direction and a free magnetic layer with a changeable magnetic helicity. The fixed magnetic layer and the free magnetic layer are preferably separated by a non-magnetic layer, and the reference layer includes an easy axis perpendicular to the reference layer. A current can be applied to the device to induce a torque that alters the magnetic state of the device so that it can act as a magnetic memory for writing information. The resistance, which depends on the magnetic state of the device, is measured to thereby read out the information stored in the device.
|
申请公布号 |
CA2703696(A1) |
申请公布日期 |
2009.05.07 |
申请号 |
CA20082703696 |
申请日期 |
2008.10.30 |
申请人 |
NEW YORK UNIVERSITY |
发明人 |
KENT, ANDREW;OZYILMAZ, BARBAROS;GONZALEZ GARCIA, ENRIQUE |
分类号 |
G11C11/15;H01L27/11;H01L27/115 |
主分类号 |
G11C11/15 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|